Improve efficiency LED Tube light the main way

Typically the unit input power that the energy generated by the photoelectric conversion efficiency, referred to as light efficiency. According to the law of conservation of energy, 

LED input power through the final two forms of light and heat is released, higher luminous efficiency, the less heat release, LED chips 
Smaller temperature rise, which is to improve the light efficiency can reduce junction temperature of the basic reasons. 
Experiments indicate that, for the bright LED Tube light, improving light efficiency is to improve the efficiency LED Tube light the main way. InGaAlP usually 
Ting from the outside on a GaAs substrate grown InGaAlP emitting area and prepared from GaP window area, compared with InGaAlP, GaAs material 
Material having a smaller band gap, so that when short-wavelength light from the light emitting region and the surface of the window when it is fired into the GaAs substrate 
Fully absorbed, a device main luminous efficiency is not high. An effective method is to first remove the improvement GaAs substrate, 
Replaced by a transparent GaP crystals at all, because the chip removed substrate absorption zone, thus greatly enhance the luminous efficiency of the device 
Rate. In recent years, Japan, Taiwan and some of the company, after much research, the successful development of a technology that the MB, 
Method to obtain a transparent substrate with a similar good results. MB craft's basic point is: first remove the GaAs substrate, and then in its 
The surface of the Si substrate surface while elemental metal vapor-deposited Al film, and at a certain temperature and pressure welded together. So, 
Irradiated from the light emitting layer to the substrate by Al metal of the light reflected to the wax layer of the chip surface, so that the luminous efficiency of the device 
More than 2.5 times. In addition MB structures outside of the device, the Taiwan National League has also developed a model that the GB InGaAlP LED high brightness new generation of devices, the process is the use of a new type of transparent plastic, will have absorbed GaAs epitaxial wafers and sapphire substrate 
Substrates bonded together, and then subsequently removed GaAs absorbing substrate and the epitaxial layer on the production of electrodes to obtain a high 
Luminous efficiency. Osram, Germany has developed a large number of surface engraving of the small size of the structure is the wavelength, so that the light efficiency Ming 
Significantly increased. Experiments show that a large number of texture etching deeper, then the rate of increase will light the more obvious. Measuring point, the window 
Layer thickness of 20μm device, the light efficiency can be increased by 30%, when the window is reduced to 10μm thickness, the light efficiency will have 
60% of the improvement. For the 585-625nm wavelength of the LED device, making texture, the luminous efficiency of 30lm / W, which 
Value is close to the level of the transparent substrate of the device. For the general structure of a GaN-based blue-green device, 
P-type Ni-Au surface metal electrode layer limits the light output efficiency, 
Using GaN LED flip chip structure, due to the Si-based flip-chip pads, LED Tube light emitted light directly emitted through the sapphire 
Of the outgoing light intensity without loss, thus enhancing the efficiency of its light. Experiments indicate that, at the peak wavelength of 450-530nm 
Area, flip the minimum power type LED Tube light device efficiency than the ordinary type device is 1.6 times higher.